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Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiC
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The Origin of Triangular Surface Defects in 4H-SiC CVD Epilayers
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Gaseous Etching for Characterization of Structural Defects in Silicon Carbide Single Crystals
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Equilibrium Growth Morphologies of SiC Polytypes
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Experimental Studies of Hollow-Core Screw Dislocations in 6H-SiC and 4H-SiC Single Crystals
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Gaseous Etching for Characterization of Structural...

Gaseous Etching for Characterization of Structural Defects in Silicon Carbide Single Crystals

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

421-424

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.421

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Online since:

February 1998

Authors:

J. Anthony Powell, David J. Larkin, Andrew J. Trunek

Keywords:

Characterization, Defect, Dislocation, Etching, Step Bunching, Transformation

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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