Investigation of Polymorphism and Estimation of Lattice Constants of SiC Epilayers by Four Circle X-Ray Diffraction

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

437-440

DOI:

10.4028/www.scientific.net/MSF.264-268.437

Citation:

H. Romanus et al., "Investigation of Polymorphism and Estimation of Lattice Constants of SiC Epilayers by Four Circle X-Ray Diffraction", Materials Science Forum, Vols. 264-268, pp. 437-440, 1998

Online since:

February 1998

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