Paper Titles

Gaseous Etching for Characterization of Structural Defects in Silicon Carbide Single Crystals
p.421

Equilibrium Growth Morphologies of SiC Polytypes
p.425

Experimental Studies of Hollow-Core Screw Dislocations in 6H-SiC and 4H-SiC Single Crystals
p.429

Structural Characterization of SiC Crystals Grown by Physical Vapor Transport
p.433

Investigation of Polymorphism and Estimation of Lattice Constants of SiC Epilayers by Four Circle X-Ray Diffraction
p.437

Site Identification of 6H-SiC Using RBS/Channeling Technique
p.441

Structural Characterization of 3C-SiC Epitaxially Grown on Si-On-Insulator
p.445

Electronic Properties of Doped SiC at Elevated Temperatures Studied by Raman Scattering
p.449

Optical Properties of Silicon Carbide: Some Recent Developments
p.455

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Investigation of Polymorphism and Estimation of...

Investigation of Polymorphism and Estimation of Lattice Constants of SiC Epilayers by Four Circle X-Ray Diffraction

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Silicon Carbide, III-Nitrides and Related Materials

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

437-440

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.437

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Online since:

February 1998

Authors:

Henry Romanus, G. Teichert, Lothar Spieß

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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