Electronic Properties of Doped SiC at Elevated Temperatures Studied by Raman Scattering

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

449-454

DOI:

10.4028/www.scientific.net/MSF.264-268.449

Citation:

H. Harima et al., "Electronic Properties of Doped SiC at Elevated Temperatures Studied by Raman Scattering", Materials Science Forum, Vols. 264-268, pp. 449-454, 1998

Online since:

February 1998

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$35.00

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