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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Electronic Properties of Doped SiC at Elevated...

Electronic Properties of Doped SiC at Elevated Temperatures Studied by Raman Scattering

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

449-454

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.449

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Online since:

February 1998

Authors:

Hiroshi Harima, Takahiro Hosoda, Shinichi Nakashima

Keywords:

Carrier Density, Coupled Mode, Damping, Fano Interference, High-Temperature, LO Phonon, Mobility, Plasmon, Raman Scattering

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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