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Optical Properties of Silicon Carbide: Some Recent Developments
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Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC
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Phosphorus Four Particle Donor Bound Exciton Complex in 6H SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Optical Properties of Silicon Carbide: Some Recent...

Optical Properties of Silicon Carbide: Some Recent Developments

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Silicon Carbide, III-Nitrides and Related Materials

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

455-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.455

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Online since:

February 1998

Authors:

Robert P. Devaty, Wolfgang J. Choyke, S.G. Sridhara, L.L. Clemen, D.G. Nizhner, David J. Larkin, T. Troffer, Gerhard Pensl, Tsunenobu Kimoto, H.S. Kong

Keywords:

Absorption, Donors, Excitons, Magneto-Optics, Phosphorus

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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