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Paper Titles
Structural Characterization of 3C-SiC Epitaxially Grown on Si-On-Insulator
p.445
Electronic Properties of Doped SiC at Elevated Temperatures Studied by Raman Scattering
p.449
Optical Properties of Silicon Carbide: Some Recent Developments
p.455
Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC
p.461
Phosphorus Four Particle Donor Bound Exciton Complex in 6H SiC
p.465
Some Aspects of the Photoluminescence and Raman Spectroscopy of (10-10)- and (11-20)-Oriented 4H and 6H Silicon Carbide
p.469
The Neutral Silicon Vacancy in 6H and 4H SiC
p.473
Bound Exciton Recombination in Electron Irradiated 4H-SiC
p.477
Characterization of Deep Levels in SiC by Photoluminescence Spectroscopy and Mapping
p.481

Phosphorus Four Particle Donor Bound Exciton Complex in 6H SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

465-468

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.465

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Online since:

February 1998

Authors:

S.G. Sridhara, L.L. Clemen, D.G. Nizhner, Wolfgang J. Choyke, Robert P. Devaty, David J. Larkin

Keywords:

Bound Exciton, Phosphorus, Spin-Orbit Splitting, Valley-Orbit Splitting

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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