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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Extended Defects in SiC and GaN Semiconductors

Extended Defects in SiC and GaN Semiconductors

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

399-408

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.399

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Online since:

February 1998

Authors:

P. Pirouz

Keywords:

Defect, Dislocation, Gallium Nitride (GaN), Inversion Domains, Polytype, Silicon Carbide (SiC), Stacking Fault

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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