Paper Titles

High Resolution Photoemission Study of the 6H-SiC/SiO₂ Interface
p.375

Combined Ab Initio Total Energy Density Functional Calculations and Scanning Tunneling Microscopy Experiments of the β-SiC(001) c(4x2) Surface
p.379

Angle-Resolved Photoemission Study of the β-SiC(100)-(2x1)-Surface
p.383

Self-Organized One-Dimensional Si Atomic Chains on Cubic Silicon Carbide Surface
p.387

High Resolution Photoemission Spectroscopy Using Synchrotron Radiation Study of the SiO₂/β-SiC(100)3x2 Interface Composition
p.391

Raman Investigation of Stress Relaxation at the 3C-SiC/Si Interface
p.395

Extended Defects in SiC and GaN Semiconductors
p.399

Defect Characterization of Homo-Epitaxially Grown 6H-SiC on (0001) Silicon and (000-1) Carbon Faces
p.409

Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiC
p.413

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268High Resolution Photoemission Spectroscopy Using...

High Resolution Photoemission Spectroscopy Using Synchrotron Radiation Study of the SiO₂/β-SiC(100)3x2 Interface Composition

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

391-394

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.391

Citation:

Cite this paper

Online since:

February 1998

Authors:

D. Dunham, P. Soukiassian, J.D. Denlinger, B.P. Tonner, E. Rothenberg

Keywords:

Core Level Photoemission Spectroscopy, Interface Formation, Oxide, Passivation, Surface, Synchrotron Radiation (XRD)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: