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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Raman Investigation of Stress Relaxation at the...

Raman Investigation of Stress Relaxation at the 3C-SiC/Si Interface

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

395-398

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.395

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Online since:

February 1998

Authors:

Jean Marie Bluet, L.A. Falkovsky, N. Planes, Jean Camassel

Keywords:

Nonuniform Strain, SOI Substrates, Stress Relaxation

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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