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Defect Characterization of Homo-Epitaxially Grown 6H-SiC on (0001) Silicon and (000-1) Carbon Faces

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

409-412

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.409

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Online since:

February 1998

Authors:

J. Stoemenos, Lea Di Cioccio, V. Papaioannou, D. David, C. Pudda

Keywords:

6H to 3C SiC Transformation, Microtwins

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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