Defect Characterization of Homo-Epitaxially Grown 6H-SiC on (0001) Silicon and (000-1) Carbon Faces

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

409-412

DOI:

10.4028/www.scientific.net/MSF.264-268.409

Citation:

J. Stoemenos et al., "Defect Characterization of Homo-Epitaxially Grown 6H-SiC on (0001) Silicon and (000-1) Carbon Faces", Materials Science Forum, Vols. 264-268, pp. 409-412, 1998

Online since:

February 1998

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$35.00

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