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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268High Resolution Photoemission Study of the...

High Resolution Photoemission Study of the 6H-SiC/SiO₂ Interface

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

375-378

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.375

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Online since:

February 1998

Authors:

B. Mattern, M. Bassler, Gerhard Pensl, Lothar Ley

Keywords:

Interface Composition, Photoelectron Spectroscopy, Silicon Dioxide, Valence-Band Offset

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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