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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Surface Morphology Improvement of SiC Epitaxy by...

Surface Morphology Improvement of SiC Epitaxy by Sacrificial Oxidation

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

367-370

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.367

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Online since:

February 1998

Authors:

C.J. Anthony, A.J. Pidduck, Michael J. Uren

Keywords:

Atomic Force Microscope (AFM), Epitaxy, RCA Clean, Sacrificial Oxidation, Silicon Dioxide, Surface Defect, UV Ozone

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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