Paper Titles

Deposition of Cs on Graphitized 4H-SiC Surfaces
p.335

Theory of Si-Rich SiC Surfaces: Consequences for Epitaxial Growth
p.339

Polarity Dependent Step Bunching and Structure of Hexagonal SiC Surfaces
p.343

Collective Surface Excitations in 3C-SiC(100)
p.347

FTIR-ATR Analysis of SiC(000-1) and SiC(0001) Surfaces
p.351

Polytype and Surface Characterization of Silicon Carbide Thin Films
p.355

Characterization of Mechanically Polished Surfaces of Single Crystalline 6H-SiC
p.359

AFM Study of In Situ Etching of 4H and 6H SiC Substrates
p.363

Surface Morphology Improvement of SiC Epitaxy by Sacrificial Oxidation
p.367

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268FTIR-ATR Analysis of SiC(000-1) and SiC(0001)...

FTIR-ATR Analysis of SiC(000-1) and SiC(0001) Surfaces

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

351-354

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.351

Citation:

Cite this paper

Online since:

February 1998

Authors:

Hidekazu Tsuchida, Isaho Kamata, Kunikaza Izumi

Keywords:

Chemical Treatment, FTIR-ATR, Hydrogen, Surface, Termination

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: