AFM Study of In Situ Etching of 4H and 6H SiC Substrates

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

363-366

Citation:

S. Karlsson and N. Nordell, "AFM Study of In Situ Etching of 4H and 6H SiC Substrates", Materials Science Forum, Vols. 264-268, pp. 363-366, 1998

Online since:

February 1998

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$38.00

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