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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268AFM Study of In Situ Etching of 4H and 6H SiC...

AFM Study of In Situ Etching of 4H and 6H SiC Substrates

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Silicon Carbide, III-Nitrides and Related Materials

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

363-366

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.363

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Online since:

February 1998

Authors:

S. Karlsson, Nils Nordell

Keywords:

Atomic Force Microscope (AFM), Epitaxy, Etching, Surface Preparation, Surface Roughness (SR)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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