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Surface Reconstructions of 6H-SiC(0001) and Surface-Structure-Controlled Epitaxial Growth
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Electronic and Atomic Structure of the C-Terminated 6H-SiC Surface
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Deposition of Cs on Graphitized 4H-SiC Surfaces
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Theory of Si-Rich SiC Surfaces: Consequences for Epitaxial Growth
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Polarity Dependent Step Bunching and Structure of Hexagonal SiC Surfaces
p.343

Collective Surface Excitations in 3C-SiC(100)
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FTIR-ATR Analysis of SiC(000-1) and SiC(0001) Surfaces
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Polytype and Surface Characterization of Silicon Carbide Thin Films
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Characterization of Mechanically Polished Surfaces of Single Crystalline 6H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Polarity Dependent Step Bunching and Structure of...

Polarity Dependent Step Bunching and Structure of Hexagonal SiC Surfaces

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

343-346

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.343

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Online since:

February 1998

Authors:

J. Schardt, J. Bernhardt, M. Franke, Ulrich Starke, K. Heime

Keywords:

3C-SiC, 4H-SiC, 6H-SiC, Dangling Bond Saturation, Hexagonal Surfaces, Low-Energy Electron Diffraction, Morpholoy, Step Bunching, Surface Structure

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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