Paper Titles

Bound Exciton Recombination in Electron Irradiated 4H-SiC
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Characterization of Deep Levels in SiC by Photoluminescence Spectroscopy and Mapping
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Time Resolved PL Study of Multi Bound Excitons in 3C SiC
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Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress
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D_II Revisited in an Modern Guise - 6H and 4H SiC
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Near Band-Gap Emission in V-Implanted and Annealed 4H-SiC
p.497

Photoluminescence and Backscattering Characterization of 6H SiC Implanted with Erbium and Oxygen Ions
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Luminescence Properties of Er Implanted Polycrystalline 3C SiC
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Measurement of High Field Electron Transport in Silicon Carbide
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268DII Revisited in an Modern Guise - 6H and 4H SiC

D_II Revisited in an Modern Guise - 6H and 4H SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

493-496

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.493

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Online since:

February 1998

Authors:

S.G. Sridhara, D.G. Nizhner, Robert P. Devaty, Wolfgang J. Choyke, T. Dalibor, Gerhard Pensl, Tsunenobu Kimoto

Keywords:

Defect, Ion Implantation, Photoluminescence (PL)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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