Near Band-Gap Emission in V-Implanted and Annealed 4H-SiC

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

497-500

DOI:

10.4028/www.scientific.net/MSF.264-268.497

Citation:

A. Henry et al., "Near Band-Gap Emission in V-Implanted and Annealed 4H-SiC", Materials Science Forum, Vols. 264-268, pp. 497-500, 1998

Online since:

February 1998

Export:

Price:

$35.00

In order to see related information, you need to Login.