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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Near Band-Gap Emission in V-Implanted and Annealed...

Near Band-Gap Emission in V-Implanted and Annealed 4H-SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

497-500

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.497

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Online since:

February 1998

Authors:

Anne Henry, T. Egilsson, Ivan G. Ivanov, Chris I. Harris, Susan Savage, Erik Janzén

Keywords:

D₂ Center, Ion Implantation, Photoluminescence (PL), Vanadium

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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