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Luminescence Properties of Er Implanted Polycrystalline 3C SiC
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Measurement of High Field Electron Transport in Silicon Carbide
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Ionization Rates and Critical Fields in 4H SiC Junction Devices
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Measurement of the Hall Scattering Factor in 4H SiC Epilayers from 40K to 290K and up to Magnetic Fields of Nine Tesla
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Electrical Conductivity of Single-Crystalline Bulk 6H-SiC and Epitaxial Layers of AlN in the Temperature Range 300-2300 K
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Monitory Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay Technique
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Ionization Rates and Critical Fields in 4H SiC...

Ionization Rates and Critical Fields in 4H SiC Junction Devices

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

513-516

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.513

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Online since:

February 1998

Authors:

Andrey O. Konstantinov, Qamar-ul Wahab, Nils Nordell, Ulf Lindefelt

Keywords:

Blocking Voltage, Critical Field, Ionization Rates, Junction Breakdown

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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