Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers: A Study of Carrier Recombination and Transport Parameters

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

529-532

DOI:

10.4028/www.scientific.net/MSF.264-268.529

Citation:

V. Grivickas et al., "Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers: A Study of Carrier Recombination and Transport Parameters", Materials Science Forum, Vols. 264-268, pp. 529-532, 1998

Online since:

February 1998

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$35.00

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