Ionization Rates and Critical Fields in 4H SiC Junction Devices
p.513
p.513
Measurement of the Hall Scattering Factor in 4H SiC Epilayers from 40K to 290K and up to Magnetic Fields of Nine Tesla
p.517
p.517
Electrical Conductivity of Single-Crystalline Bulk 6H-SiC and Epitaxial Layers of AlN in the Temperature Range 300-2300 K
p.521
p.521
Monitory Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay Technique
p.525
p.525
Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers: A Study of Carrier Recombination and Transport Parameters
p.529
p.529
Evaluation of Auger Recombination Rate in 4H-SiC
p.533
p.533
Ground States of the Ionized Isoelectronic Ti Acceptor in SiC
p.537
p.537
Radiotracer Identification of Ti, V and Cr Band Gap States in 4H- and 6H-SiC
p.541
p.541
Deep Levels in SiC:V by High Temperature Transport Measurements
p.545
p.545
Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers: A Study of Carrier Recombination and Transport Parameters
Abstract:
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Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
529-532
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Online since:
February 1998
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© 1998 Trans Tech Publications Ltd. All Rights Reserved
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