Paper Titles

Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers: A Study of Carrier Recombination and Transport Parameters
p.529

Evaluation of Auger Recombination Rate in 4H-SiC
p.533

Ground States of the Ionized Isoelectronic Ti Acceptor in SiC
p.537

Radiotracer Identification of Ti, V and Cr Band Gap States in 4H- and 6H-SiC
p.541

Deep Levels in SiC:V by High Temperature Transport Measurements
p.545

Deep Level Defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient Spectroscopy
p.549

Oxygen-Related Defect Centers in 4H Silicon Carbide
p.553

Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC
p.557

Observation of Metastable Defect in Electron Irradiated 6H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Deep Levels in SiC:V by High Temperature Transport...

Deep Levels in SiC:V by High Temperature Transport Measurements

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Silicon Carbide, III-Nitrides and Related Materials

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

545-548

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.545

Citation:

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Online since:

February 1998

Authors:

W.C. Mitchel, Ronald Perrin, Jonathan Goldstein, Matthew D. Roth, M. Ahoujja, S.R. Smith, A.O. Evwaraye, J.S. Solomon, G. Landis, Jason R. Jenny, H. McD. Hobgood, G. Augustine, Vijay Balakrishna

Keywords:

Hall-Effect, Semi-Insulating Material, Vanadium Doping

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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