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Oxygen-Related Defect Centers in 4H Silicon Carbide
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Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC
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Observation of Metastable Defect in Electron Irradiated 6H-SiC
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Electrically Active Defects in n-Type 4H- and 6H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Electrical Characterization of the Gallium...

Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

557-560

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.557

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Online since:

February 1998

Authors:

T. Troffer, Gerhard Pensl, Adolf Schöner, Anne Henry, Christer Hallin, Olof Kordina, Erik Janzén

Keywords:

Admittance Spectroscopy, Gallium Acceptor, Hall-Effect, Ion Implantation

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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