Deep Level Defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient Spectroscopy

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

549-552

DOI:

10.4028/www.scientific.net/MSF.264-268.549

Citation:

M.B. Scott et al., "Deep Level Defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient Spectroscopy", Materials Science Forum, Vols. 264-268, pp. 549-552, 1998

Online since:

February 1998

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$35.00

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