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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Deep Level Defect Study of Ion Implanted (Ar, Mg,...

Deep Level Defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient Spectroscopy

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

549-552

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.549

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Online since:

February 1998

Authors:

M.B. Scott, James D. Scofield, Y.K. Yeo, R.L. Hengehold

Keywords:

Annealing, Complex, Defect Level, DLTS, Ion Implantation, Silicon Carbide (SiC)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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