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Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC
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Observation of Metastable Defect in Electron Irradiated 6H-SiC
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Electrically Active Defects in n-Type 4H- and 6H-SiC
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Phonon Spectrum of Band-to-Band Optical Transitions in 6H-SiC as Determined by Optical Admittance Spectroscopy
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Observation of Metastable Defect in Electron...

Observation of Metastable Defect in Electron Irradiated 6H-SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

561-564

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.561

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Online since:

February 1998

Authors:

Carl G. Hemmingsson, Nguyen Tien Son, Olof Kordina, J. Lennart Lindström, Erik Janzén

Keywords:

DLTS, Electron Irradiation, Metastability, Silicon Carbide (SiC), Transition Probability

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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