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Phonon Spectrum of Band-to-Band Optical Transitions in 6H-SiC as Determined by Optical Admittance Spectroscopy
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Electrical and Transmission Electron Microscopy Characterisation of 4H-SiC Homoepitaxial Mesa Diodes
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High-Temperature Annealing of 6H-SiC Single Crystals and the Site-Competition Processes
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Electronic Structure of Acceptors in Silicon Carbide
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High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268High-Temperature Annealing of 6H-SiC Single...

High-Temperature Annealing of 6H-SiC Single Crystals and the Site-Competition Processes

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

577-580

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.577

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Online since:

February 1998

Authors:

S.I. Vlaskina, Y.P. Lee, V.E. Rodionov, Maria Kaminska

Keywords:

Absorption Coefficient, Annealing, Hall Factors, Photoluminescence (PL), Self-Compensation

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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