Paper Titles

Electrical and Transmission Electron Microscopy Characterisation of 4H-SiC Homoepitaxial Mesa Diodes
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High-Temperature Annealing of 6H-SiC Single Crystals and the Site-Competition Processes
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Electronic Structure of Acceptors in Silicon Carbide
p.581

High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC
p.587

On the Identification of an Al Related Deep Centre in 4H-SiC - Self-Compensation in SiC?
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X-Band ENDOR of Boron and Beryllium Acceptors in Silicon Carbide
p.595

Optically Detected Magnetic Resonance Studies of Non-Radiative Recombination Centres in 6H SiC
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Chromium in 4H and 6H SiC: Photoluminescence and Zeeman Studies
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Electron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide Crystals
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268On the Identification of an Al Related Deep Centre...

On the Identification of an Al Related Deep Centre in 4H-SiC - Self-Compensation in SiC?

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

591-594

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.591

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Online since:

February 1998

Authors:

B.K. Meyer, A. Hofstätter, P.G. Baranov

Keywords:

Aluminum (Al), Deep Defects, ENDOR, Hyperfine Interaction

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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