On the Identification of an Al Related Deep Centre in 4H-SiC - Self-Compensation in SiC?

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

591-594

DOI:

10.4028/www.scientific.net/MSF.264-268.591

Citation:

B.K. Meyer et al., "On the Identification of an Al Related Deep Centre in 4H-SiC - Self-Compensation in SiC?", Materials Science Forum, Vols. 264-268, pp. 591-594, 1998

Online since:

February 1998

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$35.00

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