Paper Titles

Phonon Spectrum of Band-to-Band Optical Transitions in 6H-SiC as Determined by Optical Admittance Spectroscopy
p.569

Electrical and Transmission Electron Microscopy Characterisation of 4H-SiC Homoepitaxial Mesa Diodes
p.573

High-Temperature Annealing of 6H-SiC Single Crystals and the Site-Competition Processes
p.577

Electronic Structure of Acceptors in Silicon Carbide
p.581

High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC
p.587

On the Identification of an Al Related Deep Centre in 4H-SiC - Self-Compensation in SiC?
p.591

X-Band ENDOR of Boron and Beryllium Acceptors in Silicon Carbide
p.595

Optically Detected Magnetic Resonance Studies of Non-Radiative Recombination Centres in 6H SiC
p.599

Chromium in 4H and 6H SiC: Photoluminescence and Zeeman Studies
p.603

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268High-Frequency EPR Studies of Shallow and Deep...

High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

587-590

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.587

Citation:

Cite this paper

Online since:

February 1998

Authors:

J. Schmidt, T. Matsumoto, O.G. Poluektov, A. van Duijn-Arnold, Toshiyuki Ikoma, P.G. Baranov, E.N. Mokhov

Keywords:

Acceptor, Boron, ENDOR, EPR

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: