Paper Titles

High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC
p.587

On the Identification of an Al Related Deep Centre in 4H-SiC - Self-Compensation in SiC?
p.591

X-Band ENDOR of Boron and Beryllium Acceptors in Silicon Carbide
p.595

Optically Detected Magnetic Resonance Studies of Non-Radiative Recombination Centres in 6H SiC
p.599

Chromium in 4H and 6H SiC: Photoluminescence and Zeeman Studies
p.603

Electron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide Crystals
p.607

Characterization of Defects in Electron Irradiated 6H-SiC by Positron Lifetime and Electron Spin Resonance
p.611

ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons
p.615

Distribution of Paramagnetic Defects in 3C-SiC Epitaxial Films Grown by LPCVD Method with Alternate Gas Supply
p.619

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Chromium in 4H and 6H SiC: Photoluminescence and...

Chromium in 4H and 6H SiC: Photoluminescence and Zeeman Studies

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

603-606

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.603

Citation:

Cite this paper

Online since:

February 1998

Authors:

Nguyen Tien Son, Alexsandre Ellison, Mike F. MacMillan, Olof Kordina, W.M. Chen, Bo Monemar, Erik Janzén

Keywords:

4H-SiC, 6H-SiC, Chromium Doping, Photoluminescence (PL), Zeeman Effect

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: