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Optically Detected Magnetic Resonance Studies of Non-Radiative Recombination Centres in 6H SiC
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Chromium in 4H and 6H SiC: Photoluminescence and Zeeman Studies
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Electron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide Crystals
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Characterization of Defects in Electron Irradiated 6H-SiC by Positron Lifetime and Electron Spin Resonance
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ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons
p.615

Distribution of Paramagnetic Defects in 3C-SiC Epitaxial Films Grown by LPCVD Method with Alternate Gas Supply
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Experimental and Theoretical Analysis of the High Temperature Thermal Conductivity of Monocrystalline SiC
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Deformation of Monocrystalline 6H-SiC
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Measurement of the Thermal Conductivity of Thin β-SiC Films between 80 K and 600 K
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268ESR Studies of Defects in p-Type 6H-SiC Irradiated...

ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

615-618

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.615

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Online since:

February 1998

Authors:

Dai Bum Cha, Hisayoshi Itoh, Norio Morishita, Atsuo Kawasuso, Takeshi Ohshima, Yuichi Watanabe, J. Ko, Kin Kiong Lee, Isamu Nashiyama

Keywords:

Annealing, Defect, Electron Irradiation, Electron Spin Resonance

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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