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ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons
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Distribution of Paramagnetic Defects in 3C-SiC Epitaxial Films Grown by LPCVD Method with Alternate Gas Supply
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Experimental and Theoretical Analysis of the High Temperature Thermal Conductivity of Monocrystalline SiC
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Deformation of Monocrystalline 6H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Distribution of Paramagnetic Defects in 3C-SiC...

Distribution of Paramagnetic Defects in 3C-SiC Epitaxial Films Grown by LPCVD Method with Alternate Gas Supply

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

619-622

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.619

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Online since:

February 1998

Authors:

Tomio Izumi, K. Kobayashi, E. Hirosawa, Takamitsu Kawahara, Hiroyuki Nagasawa

Keywords:

Carbonization, Defect Distribution, ESR, LPCVD

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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