Paper Titles

Characterization of Defects in Electron Irradiated 6H-SiC by Positron Lifetime and Electron Spin Resonance
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ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons
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Distribution of Paramagnetic Defects in 3C-SiC Epitaxial Films Grown by LPCVD Method with Alternate Gas Supply
p.619

Experimental and Theoretical Analysis of the High Temperature Thermal Conductivity of Monocrystalline SiC
p.623

Deformation of Monocrystalline 6H-SiC
p.627

Measurement of the Thermal Conductivity of Thin β-SiC Films between 80 K and 600 K
p.631

Spatial Uniformity of the Mechanical Properties of 3C-SiC Films Grown on 4-Inch Si Wafers as a Function of Film Growth Conditions
p.635

The Measurement of the Thickness of Thin SiC Layers on Silicon
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Thickness Contour Mapping of SiC Epi-Films on SiC Substrates
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Deformation of Monocrystalline 6H-SiC

Deformation of Monocrystalline 6H-SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

627-630

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.627

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Online since:

February 1998

Authors:

A.V. Samant, W.L. Zhou, P. Pirouz

Keywords:

Basal Slip Systems, Deformation, Shear Stress, Strain Rate, TEM

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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