Spatial Uniformity of the Mechanical Properties of 3C-SiC Films Grown on 4-Inch Si Wafers as a Function of Film Growth Conditions

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

635-640

DOI:

10.4028/www.scientific.net/MSF.264-268.635

Citation:

K. Chandra et al., "Spatial Uniformity of the Mechanical Properties of 3C-SiC Films Grown on 4-Inch Si Wafers as a Function of Film Growth Conditions", Materials Science Forum, Vols. 264-268, pp. 635-640, 1998

Online since:

February 1998

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$35.00

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