Paper Titles

High-Temperature Annealing of 6H-SiC Single Crystals and the Site-Competition Processes
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Electronic Structure of Acceptors in Silicon Carbide
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High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC
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On the Identification of an Al Related Deep Centre in 4H-SiC - Self-Compensation in SiC?
p.591

X-Band ENDOR of Boron and Beryllium Acceptors in Silicon Carbide
p.595

Optically Detected Magnetic Resonance Studies of Non-Radiative Recombination Centres in 6H SiC
p.599

Chromium in 4H and 6H SiC: Photoluminescence and Zeeman Studies
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Electron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide Crystals
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Characterization of Defects in Electron Irradiated 6H-SiC by Positron Lifetime and Electron Spin Resonance
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268X-Band ENDOR of Boron and Beryllium Acceptors in...

X-Band ENDOR of Boron and Beryllium Acceptors in Silicon Carbide

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

595-598

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.595

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Online since:

February 1998

Authors:

A. Hofstätter, B.K. Meyer, A. Scharmann, P.G. Baranov, Ivan V. Ilyin, E.N. Mokhov

Keywords:

Beryllium, Boron Isotopes, ENDOR, Hyperfine Interaction

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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