Paper Titles

Electrically Active Defects in n-Type 4H- and 6H-SiC
p.565

Phonon Spectrum of Band-to-Band Optical Transitions in 6H-SiC as Determined by Optical Admittance Spectroscopy
p.569

Electrical and Transmission Electron Microscopy Characterisation of 4H-SiC Homoepitaxial Mesa Diodes
p.573

High-Temperature Annealing of 6H-SiC Single Crystals and the Site-Competition Processes
p.577

Electronic Structure of Acceptors in Silicon Carbide
p.581

High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC
p.587

On the Identification of an Al Related Deep Centre in 4H-SiC - Self-Compensation in SiC?
p.591

X-Band ENDOR of Boron and Beryllium Acceptors in Silicon Carbide
p.595

Optically Detected Magnetic Resonance Studies of Non-Radiative Recombination Centres in 6H SiC
p.599

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Electronic Structure of Acceptors in Silicon...

Electronic Structure of Acceptors in Silicon Carbide

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

581-586

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.581

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Online since:

February 1998

Authors:

P.G. Baranov

Keywords:

Acceptor, Electron Paramagnetic Resonance (EPR), Electronic Structure

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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