Paper Titles

Deep Level Defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient Spectroscopy
p.549

Oxygen-Related Defect Centers in 4H Silicon Carbide
p.553

Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC
p.557

Observation of Metastable Defect in Electron Irradiated 6H-SiC
p.561

Electrically Active Defects in n-Type 4H- and 6H-SiC
p.565

Phonon Spectrum of Band-to-Band Optical Transitions in 6H-SiC as Determined by Optical Admittance Spectroscopy
p.569

Electrical and Transmission Electron Microscopy Characterisation of 4H-SiC Homoepitaxial Mesa Diodes
p.573

High-Temperature Annealing of 6H-SiC Single Crystals and the Site-Competition Processes
p.577

Electronic Structure of Acceptors in Silicon Carbide
p.581

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Electrically Active Defects in n-Type 4H- and...

Electrically Active Defects in n-Type 4H- and 6H-SiC

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

565-568

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.565

Citation:

Cite this paper

Online since:

February 1998

Authors:

J.P. Doyle, Lucjan Swadźba, Bengt Gunnar Svensson

Keywords:

Annealing, Defect, DLTS, Irradiation, Kinetic, SIMS

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: