Paper Titles

Ground States of the Ionized Isoelectronic Ti Acceptor in SiC
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Radiotracer Identification of Ti, V and Cr Band Gap States in 4H- and 6H-SiC
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Deep Levels in SiC:V by High Temperature Transport Measurements
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Deep Level Defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient Spectroscopy
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Oxygen-Related Defect Centers in 4H Silicon Carbide
p.553

Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC
p.557

Observation of Metastable Defect in Electron Irradiated 6H-SiC
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Electrically Active Defects in n-Type 4H- and 6H-SiC
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Phonon Spectrum of Band-to-Band Optical Transitions in 6H-SiC as Determined by Optical Admittance Spectroscopy
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Oxygen-Related Defect Centers in 4H Silicon...

Oxygen-Related Defect Centers in 4H Silicon Carbide

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

553-556

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.553

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Online since:

February 1998

Authors:

T. Dalibor, Gerhard Pensl, T. Yamamoto, Tsunenobu Kimoto, Hiroyuki Matsunami, S.G. Sridhara, D.G. Nizhner, Robert P. Devaty, Wolfgang J. Choyke

Keywords:

Admittance Spectroscopy, Deep Oxygen-Related Centers, Deep-Level Transient Spectroscopy, Low Temperature Photoluminescence, Oxygen Implantation, Shallow Oxygen-Related Centers

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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