Paper Titles

Monitory Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay Technique
p.525

Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers: A Study of Carrier Recombination and Transport Parameters
p.529

Evaluation of Auger Recombination Rate in 4H-SiC
p.533

Ground States of the Ionized Isoelectronic Ti Acceptor in SiC
p.537

Radiotracer Identification of Ti, V and Cr Band Gap States in 4H- and 6H-SiC
p.541

Deep Levels in SiC:V by High Temperature Transport Measurements
p.545

Deep Level Defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient Spectroscopy
p.549

Oxygen-Related Defect Centers in 4H Silicon Carbide
p.553

Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC
p.557

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Radiotracer Identification of Ti, V and Cr Band...

Radiotracer Identification of Ti, V and Cr Band Gap States in 4H- and 6H-SiC

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

541-544

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.541

Citation:

Cite this paper

Online since:

February 1998

Authors:

N. Achtziger, Joachim Grillenberger, W. Witthuhn

Keywords:

Band Offset, Chromium, Deep Level, DLTS, Titanium (Ti), Transition Metal, Vanadium

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: