Paper Titles

Measurement of the Hall Scattering Factor in 4H SiC Epilayers from 40K to 290K and up to Magnetic Fields of Nine Tesla
p.517

Electrical Conductivity of Single-Crystalline Bulk 6H-SiC and Epitaxial Layers of AlN in the Temperature Range 300-2300 K
p.521

Monitory Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay Technique
p.525

Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers: A Study of Carrier Recombination and Transport Parameters
p.529

Evaluation of Auger Recombination Rate in 4H-SiC
p.533

Ground States of the Ionized Isoelectronic Ti Acceptor in SiC
p.537

Radiotracer Identification of Ti, V and Cr Band Gap States in 4H- and 6H-SiC
p.541

Deep Levels in SiC:V by High Temperature Transport Measurements
p.545

Deep Level Defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient Spectroscopy
p.549

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Evaluation of Auger Recombination Rate in 4H-SiC

Evaluation of Auger Recombination Rate in 4H-SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

533-536

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.533

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Online since:

February 1998

Authors:

Augustinas Galeckas, Jan Linnros, Vytautas Grivickas, Ulf Lindefelt, Christer Hallin

Keywords:

Auger, Band-to-Band, Diffusion, Free Carrier Absorption, Lifetime, Surface Recombination

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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