Luminescence Properties of Er Implanted Polycrystalline 3C SiC
p.505
p.505
Measurement of High Field Electron Transport in Silicon Carbide
p.509
p.509
Ionization Rates and Critical Fields in 4H SiC Junction Devices
p.513
p.513
Measurement of the Hall Scattering Factor in 4H SiC Epilayers from 40K to 290K and up to Magnetic Fields of Nine Tesla
p.517
p.517
Electrical Conductivity of Single-Crystalline Bulk 6H-SiC and Epitaxial Layers of AlN in the Temperature Range 300-2300 K
p.521
p.521
Monitory Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay Technique
p.525
p.525
Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers: A Study of Carrier Recombination and Transport Parameters
p.529
p.529
Evaluation of Auger Recombination Rate in 4H-SiC
p.533
p.533
Ground States of the Ionized Isoelectronic Ti Acceptor in SiC
p.537
p.537
Electrical Conductivity of Single-Crystalline Bulk 6H-SiC and Epitaxial Layers of AlN in the Temperature Range 300-2300 K
Abstract:
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Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
521-524
Citation:
Online since:
February 1998
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Сopyright:
© 1998 Trans Tech Publications Ltd. All Rights Reserved
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