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Measurement of High Field Electron Transport in Silicon Carbide
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Ionization Rates and Critical Fields in 4H SiC Junction Devices
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Measurement of the Hall Scattering Factor in 4H SiC Epilayers from 40K to 290K and up to Magnetic Fields of Nine Tesla
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Electrical Conductivity of Single-Crystalline Bulk 6H-SiC and Epitaxial Layers of AlN in the Temperature Range 300-2300 K
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Monitory Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay Technique
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Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers: A Study of Carrier Recombination and Transport Parameters
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Evaluation of Auger Recombination Rate in 4H-SiC
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Ground States of the Ionized Isoelectronic Ti Acceptor in SiC
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Radiotracer Identification of Ti, V and Cr Band Gap States in 4H- and 6H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Monitory Carrier Lifetime Measurements in 6H-SiC...

Monitory Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay Technique

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

525-528

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.525

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Online since:

February 1998

Keywords:

Minority Carrier Lifetime, Photoconductivity Decay

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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