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The Neutral Silicon Vacancy in 6H and 4H SiC
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Bound Exciton Recombination in Electron Irradiated 4H-SiC
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Characterization of Deep Levels in SiC by Photoluminescence Spectroscopy and Mapping
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Time Resolved PL Study of Multi Bound Excitons in 3C SiC
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Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress
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D_II Revisited in an Modern Guise - 6H and 4H SiC
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Near Band-Gap Emission in V-Implanted and Annealed 4H-SiC
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Photoluminescence and Backscattering Characterization of 6H SiC Implanted with Erbium and Oxygen Ions
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Luminescence Properties of Er Implanted Polycrystalline 3C SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Changes in the Exciton-Related Photoluminescence...

Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

489-492

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.489

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Online since:

February 1998

Authors:

Ivan G. Ivanov, Ulf Lindefelt, Anne Henry, T. Egilsson, Olof Kordina, Erik Janzén

Keywords:

Bound Exciton, Free Excitons, Photoluminescence (PL), Stress

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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