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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

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Table of Contents

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Paper Title Page

High Resolution Photoemission Study of the 6H-SiC/SiO₂ Interface

Authors: B. Mattern, M. Bassler, Gerhard Pensl, Lothar Ley

375

Combined Ab Initio Total Energy Density Functional Calculations and Scanning Tunneling Microscopy Experiments of the β-SiC(001) c(4x2) Surface

Authors: L. Douillard, F. Semond, V.Yu. Aristov, P. Soukiassian, Bernard Delley, A. Mayne, G. Dujardin, E. Wimmer

379

Angle-Resolved Photoemission Study of the β-SiC(100)-(2x1)-Surface

Authors: H. Hüsken, Bernd Schröter, W. Richter, P. Käckell, Friedhelm Bechstedt

383

Self-Organized One-Dimensional Si Atomic Chains on Cubic Silicon Carbide Surface

Authors: F. Semond, V.Yu. Aristov, L. Douillard, O. Fauchoux, P. Soukiassian, A. Mayne, G. Dujardin

387

High Resolution Photoemission Spectroscopy Using Synchrotron Radiation Study of the SiO₂/β-SiC(100)3x2 Interface Composition

Authors: D. Dunham, P. Soukiassian, J.D. Denlinger, B.P. Tonner, E. Rothenberg

391

Raman Investigation of Stress Relaxation at the 3C-SiC/Si Interface

Authors: Jean Marie Bluet, L.A. Falkovsky, N. Planes, Jean Camassel

395

Extended Defects in SiC and GaN Semiconductors

Authors: P. Pirouz

399

Defect Characterization of Homo-Epitaxially Grown 6H-SiC on (0001) Silicon and (000-1) Carbon Faces

Authors: J. Stoemenos, Lea Di Cioccio, V. Papaioannou, D. David, C. Pudda

409

Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiC

Authors: P.O.Å. Persson, Qamar-ul Wahab, L. Hultman, Nils Nordell, Adolf Schöner, K. Rottner, E. Olsson, Margareta K. Linnarsson

413

The Origin of Triangular Surface Defects in 4H-SiC CVD Epilayers

Authors: W.L. Zhou, P. Pirouz, J. Anthony Powell

417

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