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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

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Table of Contents

Paper Title Page

Comparative Monte Carlo Study of Electron Transport in 3C, 4H and 6H Silicon Carbide

Authors: R. Mickevičius, Jian Hui Zhao

291

Calculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiC

Authors: Takahiro Kinoshita, Kohei M. Itoh, J. Muto, M. Schadt, Gerhard Pensl, K. Takeda

295

The Effects of Interfacial Dipoles on the Properties of SiC-Group III-Nitride Hetero-Structures

Authors: G. Lucovsky, H. Yang, G. Lüpke

299

Pressure-Dependent Dynamical and Dielectric Properties of GaN and AlN

Authors: K. Karch, J.-M. Wagner, H. Siegle, C. Thomsen, Friedhelm Bechstedt

303

Theoretical and Experimental Study of the Lattice-Dynamical Properties of Cubic GaN

Authors: H. Sterner, A. Schewiola, K. Karch, P. Pavone, Dieter Strauch, H. Siegle, G. Kaczmarczyk, L. Filippidis, C. Thomsen

307

Electronic States of BC₂N Heterodiamond (111) Superlattices

Authors: Y. Tateyama, K. Kusakabe, T. Ogitsu, S. Tsuneyuki

311

From Precursor Atoms Towards Hetero-Phases: Strain-Dynamics Induced Carbon-Rich Si_1-xC_x Phases

Authors: György Vida, N. Moreaud, J. Calas, M. Averous

315

Large Unit Cell Superstructures on Hexagonal SiC-Sufaces Studied by LEED, AES and STM

Authors: Ulrich Starke, M. Franke, J. Bernhardt, J. Schardt, K. Reuter, K. Heinz

321

Surface Reconstructions of 6H-SiC(0001) and Surface-Structure-Controlled Epitaxial Growth

Authors: Makoto Kitabatake

327

Electronic and Atomic Structure of the C-Terminated 6H-SiC Surface

Authors: M. Hollering, B. Mattern, F. Maier, Lothar Ley, A.P.J. Stampfl, J. Xue, J.D. Riley, R.C.G. Leckey

331