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Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

ToC:

Table of Contents

Paper Title Page

Surface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si Substrates
Authors: Tetsuo Takahashi, Yuuki Ishida, Hajime Okumura, Sadafumi Yoshida, Toshihiro Sekigawa
207
Effect of Substrate Bias on 3C-SiC Deposition on Si by AC Plasma-Assisted CVD
Authors: Hideki Shimizu, M. Shiga
211
Mechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in Silicon
Authors: J.K.N. Lindner, W. Reiber, B. Stritzker
215
Formation and Prevention of Micropipes and Voids in CVD Carbonization Experiments on (100) Silicon
Authors: R. Scholz, U.M. Gösele, Frank Wischmeyer, E. Niemann
219
Fabrication of 3C-SiC on SiO2 Structures Using Wafer Bonding Techniques
Authors: Christian A. Zorman, K.N. Vinod, A.A. Yasseen, Mehran Mehregany
223
Growth Mode and Kinetics of Atmospheric Pressure Chemical Vapour Deposition of β-SiC on Si(100) Substrate
Authors: Gabriel Ferro, H. Vincent, Yves Monteil, Didier Chaussende, J. Bouix
227
Germanium as a Possible Surfactant for Growth of Beta Silicon Carbide on Silicon Substrates
Authors: S. Mitchell, Michael G. Spencer, K. Wongchotigul
231
Gas Source Molecular Beam Epitaxial Growth of 3C-SiC on Si with Heterointerface Modification by a Si-C-Ge Ternary System
Authors: Tomoaki Hatayama, Takashi Fuyuki, Hiroyuki Matsunami
235
Heteroepitaxial Growth of SiC on Si by Gas Source MBE with Silacyclobutane
Authors: Jin Ming Chen, A.J. Steckl, Mark J. Loboda
239
Heteroepitaxial Growth of 3C-SiC on Surface-Structure-Controlled MBE Layer by Low-Pressure CVD
Authors: M. Uchida, M. Deguchi, Kazuhiko Takahashi, Makoto Kitabatake, M. Kitagawa
243

Showing 51 to 60 of 350 Paper Titles

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