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Materials Science Forum
Vol. 247

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

ToC:

Table of Contents

Paper Title Page

Formation of Pyramidal Pits at the Interface of 3C-SiC and Si(001) Substrates Grown by Gas Source MBE
Authors: Jan Philipp Schmidt-Ewig, T. Troffer, Kai Christiansen, S. Christiansen, Reinhard Helbig, Gerhard Pensl, Horst P. Strunk
247
Growth of SiC Layers on (111) Si by Solid Source Molecular Beam Epitaxy
Authors: Joerg Pezoldt, Thomas Stauden, Volker Cimalla, Gernot Ecke, Henry Romanus, G. Eichhorn
251
Improved Epitaxy of Cubic SiC Thin Films on Si(111) by Solid-Source MBE
Authors: Andreas Fissel, K. Pfennighaus, Ute Kaiser, J. Kräußlich, H. Hobert, Bernd Schröter, W. Richter
255
Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBE
Authors: Ute Kaiser, P.D. Brown, A. Chuvilin, Igor I. Khodos, Andreas Fissel, W. Richter, A. Preston, Colin J. Humphreys
259
Electronic Properties of SiC Polytypes and Heterostructures
Authors: Friedhelm Bechstedt
265
Band Structure Interpretation of the Optical Transitions between Low-Lying Conduction Bands in n-Type Doped SiC Polytypes
Authors: Walter R.L. Lambrecht, Sukit Limpijumnong, Sergey N. Rashkeev, Benjamin Segall
271
Calculated Density of States and Carrier Concentration in 4H- and 6H-SiC
Authors: C. Persson, Ulf Lindefelt
275
Theoretical Studies on Defects in SiC
Authors: Peter Deák, Adam Gali, J. Miró, R. Gutierrez, A. Sieck, Thomas Frauenheim
279
An ab initio Study of Native Defects in Cubic SiC: Vacancies and Stacking Faults
Authors: A. Zywietz, P. Käckell, J. Furthmüller, Friedhelm Bechstedt
283
Calculation of Nonlinear Optical Susceptibilities for Different Polytypes of Silicon Carbide
Authors: B. Adolph, Friedhelm Bechstedt
287

Showing 61 to 70 of 350 Paper Titles

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