Volumes

Materials Science Forum
Vols. 284-286

Materials Science Forum
Vols. 282-283

Materials Science Forum
Vols. 278-281

Materials Science Forum
Vols. 276-277

Materials Science Forum
Vols. 273-275

Materials Science Forum
Vols. 269-272

Materials Science Forum
Vols. 264-268

Materials Science Forum
Vols. 258-263

Materials Science Forum
Vols. 255-257

Materials Science Forum
Vols. 251-254

Materials Science Forum
Vol. 250

Materials Science Forum
Vols. 248-249

Materials Science Forum
Vol. 247

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

Export:

ToC:

Table of Contents

<<
<
…
3
4
5
6
7
…
>
>>

Paper Title Page

Thick Film SiC Epitaxy for 'Filling Up' Micropipes

Authors: I.I. Khlebnikov, V. Madangarli, M.A. Khan, Tangali S. Sudarshan

167

A New Radiation Heated 4 Inch LPCVD System for β-SiC Heteroepitaxy

Authors: H. Möller, W. Legner, G. Krötz

171

Epitaxial Growth in 3C-SiC without Carbonization Process Using 1,3-Disilabutane

Authors: Kyung Won Lee, K.-S. Yu, Joon Woo Bae, Y. Kim

175

Growth and Characterization of SiC Films on Large-Area Si Wafers by APCVD - Temperature Dependence

Authors: Chien-Hung Wu, A.J. Fleischman, Christian A. Zorman, Mehran Mehregany

179

CVD Growth Mechanism of 3C-SiC on Si Substrates

Authors: Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura, Sadafumi Yoshida, Toshihiro Sekigawa

183

Growth of Epitaxial Cubic SiC Thin Films Using Single Source Precursors

Authors: Jin Hyo Boo, Soon Bok Lee, S.A. Ustin, W. Ho, H.P. Maruska, P.E. Norris, Il Ho Kim, C. Sung

187

Crystallinity of 3C-SiC Films Grown on Si Substrates

Authors: Kuniaki Yagi, Hiroyuki Nagasawa

191

Effects of Void Formation on Electrical and Optical Properties of 3C-SiC on Si(111) Substrates

Authors: H.W. Shim, K.C. Kim, Y.H. Seo, Kee Suk Nahm, Eun Kyung Suh, H.J. Lee, Y.G. Hwang

195

The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film on Si Substrate

Authors: Y.H. Seo, K.C. Kim, H.W. Shim, Kee Suk Nahm, Eun Kyung Suh, H.J. Lee, Y.G. Hwang, D.-K. Kim, Byung Teak Lee

199

Study of Initial Stage of SiC Growth on Si(100) Surface by XPS, RHEED and SEM

Authors: T. Takaoka, Haruo Saito, Y. Igari, I. Kusunoki

203

<<
<
…
3
4
5
6
7
…
>
>>