Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

Export:

MARCXML

ToC:

Table of Contents

Paper Title Page

The Structural Evolution of Seed Surfaces During the Initial Stages of Physical Vapor Transport SiC Growth

Authors: V.D. Heydemann, Gregory S. Rohrer, Edward M. Sanchez, Marek Skowronski

Defect Formation Mechanism of Bulk SiC

Authors: Makato Sasaki, Y. Nishio, Shigehiro Nishino, Shinichi Nakashima, Hiroshi Harima

Enlargement of SiC Crystals: Defect Formation at the Interfaces

Authors: Mikhail Anikin, Michel Pons, K. Chourou, O. Chaix-Pluchery, Jean Marie Bluet, V. Lauer, R. Pons

Impurity Incorporation During Sublimation Bulk Crystal Growth of 6H- and 4H-SiC

Authors: Noboru Ohtani, Masakazu Katsuno, J. Takahashi, Hirokatsu Yashiro, M. Kanaya, S. Shinoyama

Optically Transparent 6H-Silicon Carbide

Authors: Andrey Bakin, Sergey I. Dorozhkin, A.S. Zubrilov, N.I. Kuznetsov, Yuri M. Tairov

Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification

Authors: Stephan G. Müller, Robert Eckstein, Dieter Hofmann, L. Kadinski, P. Kaufmann, M. Kölbl, Erwin Schmitt

Modeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum Container

Authors: Yu.E. Egorov, A.O. Galyukov, S.G. Gurevich, Yuri Makarov, E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, A.S. Segal, Yu.A. Vodakov, A.N. Vorob'ev, A.I. Zhmakin

A Coupled Finite Element Model for the Sublimation Growth of SiC

Authors: P. Råback, Risto M. Nieminen, Rositza Yakimova, M. Tuominen, Erik Janzén

Studies on SiC Liquid Phase Crystallization as Technique for SiC Bulk Growth

Authors: M. Müller, Matthias Bickermann, Dieter Hofmann, Arnd Dietrich Weber, Albrecht Winnacker

Dissolution and Growth of Silicon Carbide Crystals in Melt-Solutions

Authors: V. Ivantsov, Vladimir Dmitriev