Paper Titles

The Structural Evolution of Seed Surfaces During the Initial Stages of Physical Vapor Transport SiC Growth
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Defect Formation Mechanism of Bulk SiC
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Enlargement of SiC Crystals: Defect Formation at the Interfaces
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Impurity Incorporation During Sublimation Bulk Crystal Growth of 6H- and 4H-SiC
p.49

Optically Transparent 6H-Silicon Carbide
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Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification
p.57

Modeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum Container
p.61

A Coupled Finite Element Model for the Sublimation Growth of SiC
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Studies on SiC Liquid Phase Crystallization as Technique for SiC Bulk Growth
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Optically Transparent 6H-Silicon Carbide

Optically Transparent 6H-Silicon Carbide

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Silicon Carbide, III-Nitrides and Related Materials

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

53-56

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.53

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Online since:

February 1998

Authors:

Andrey Bakin, Sergey I. Dorozhkin, A.S. Zubrilov, N.I. Kuznetsov, Yuri M. Tairov

Keywords:

Crystal Quality, Materials Science, Optical Property, Wide Band Gap Semiconductor

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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