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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

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Table of Contents

Paper Title Page

Gaseous Etching for Characterization of Structural Defects in Silicon Carbide Single Crystals

Authors: J. Anthony Powell, David J. Larkin, Andrew J. Trunek

421

Equilibrium Growth Morphologies of SiC Polytypes

Authors: Stephan G. Müller, Robert Eckstein, R.F.P. Grimbergen, Dieter Hofmann, B. Rexer

425

Experimental Studies of Hollow-Core Screw Dislocations in 6H-SiC and 4H-SiC Single Crystals

Authors: W. Si, Michael Dudley, R.C. Glass, Calvin H. Carter Jr., Valeri F. Tsvetkov

429

Structural Characterization of SiC Crystals Grown by Physical Vapor Transport

Authors: Edward M. Sanchez, V.D. Heydemann, Gregory S. Rohrer, Marek Skowronski, J. Solomon, Michael A. Capano, W.C. Mitchel

433

Investigation of Polymorphism and Estimation of Lattice Constants of SiC Epilayers by Four Circle X-Ray Diffraction

Authors: Henry Romanus, G. Teichert, Lothar Spieß

437

Site Identification of 6H-SiC Using RBS/Channeling Technique

Authors: Masataka Satoh, Katsutomo Okamoto, Y. Iwata, K. Kuriyama, M. Kanaya, Noboru Ohtani

441

Structural Characterization of 3C-SiC Epitaxially Grown on Si-On-Insulator

Authors: V. Papaioannou, Eleni Pavlidou, J. Stoemenos, W. Reichelt, E. Obermeier

445

Electronic Properties of Doped SiC at Elevated Temperatures Studied by Raman Scattering

Authors: Hiroshi Harima, Takahiro Hosoda, Shinichi Nakashima

449

Optical Properties of Silicon Carbide: Some Recent Developments

Authors: Robert P. Devaty, Wolfgang J. Choyke, S.G. Sridhara, L.L. Clemen, D.G. Nizhner, David J. Larkin, T. Troffer, Gerhard Pensl, Tsunenobu Kimoto, H.S. Kong

455

Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC

Authors: S.G. Sridhara, D.G. Nizhner, Robert P. Devaty, Wolfgang J. Choyke, T. Troffer, Gerhard Pensl, David J. Larkin, H.S. Kong

461