Materials Science Forum Vols. 264-268

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https://doi.org/10.4028/www.scientific.net/MSF.264-268

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Deep Levels in SiC:V by High Temperature Transport Measurements

Authors: W.C. Mitchel, Ronald Perrin, Jonathan Goldstein, Matthew D. Roth, M. Ahoujja, S.R. Smith, A.O. Evwaraye, J.S. Solomon, G. Landis, Jason R. Jenny, H. McD. Hobgood, G. Augustine, Vijay Balakrishna

545

Deep Level Defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient Spectroscopy

Authors: M.B. Scott, James D. Scofield, Y.K. Yeo, R.L. Hengehold

549

Authors: T. Dalibor, Gerhard Pensl, T. Yamamoto, Tsunenobu Kimoto, Hiroyuki Matsunami, S.G. Sridhara, D.G. Nizhner, Robert P. Devaty, Wolfgang J. Choyke

553

Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC

Authors: T. Troffer, Gerhard Pensl, Adolf Schöner, Anne Henry, Christer Hallin, Olof Kordina, Erik Janzén

557

Observation of Metastable Defect in Electron Irradiated 6H-SiC

Authors: Carl G. Hemmingsson, Nguyen Tien Son, Olof Kordina, J. Lennart Lindström, Erik Janzén

561

Electrically Active Defects in n-Type 4H- and 6H-SiC

Authors: J.P. Doyle, Lucjan Swadźba, Bengt Gunnar Svensson

565

Phonon Spectrum of Band-to-Band Optical Transitions in 6H-SiC as Determined by Optical Admittance Spectroscopy

Authors: S.R. Smith, A.O. Evwaraye, W.C. Mitchel