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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

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Paper Title Page

High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC

Authors: J. Schmidt, T. Matsumoto, O.G. Poluektov, A. van Duijn-Arnold, Toshiyuki Ikoma, P.G. Baranov, E.N. Mokhov

587

On the Identification of an Al Related Deep Centre in 4H-SiC - Self-Compensation in SiC?

Authors: B.K. Meyer, A. Hofstätter, P.G. Baranov

591

X-Band ENDOR of Boron and Beryllium Acceptors in Silicon Carbide

Authors: A. Hofstätter, B.K. Meyer, A. Scharmann, P.G. Baranov, Ivan V. Ilyin, E.N. Mokhov

595

Optically Detected Magnetic Resonance Studies of Non-Radiative Recombination Centres in 6H SiC

Authors: Nguyen Tien Son, Matthias Wagner, E. Sörman, W.M. Chen, Bo Monemar, Erik Janzén

599

Chromium in 4H and 6H SiC: Photoluminescence and Zeeman Studies

Authors: Nguyen Tien Son, Alexsandre Ellison, Mike F. MacMillan, Olof Kordina, W.M. Chen, Bo Monemar, Erik Janzén

603

Electron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide Crystals

Authors: P.G. Baranov, Ivan V. Ilyin, E.N. Mokhov

607

Characterization of Defects in Electron Irradiated 6H-SiC by Positron Lifetime and Electron Spin Resonance

Authors: Atsuo Kawasuso, Hisayoshi Itoh, Dai Bum Cha, Sohei Okada

611

ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons

Authors: Dai Bum Cha, Hisayoshi Itoh, Norio Morishita, Atsuo Kawasuso, Takeshi Ohshima, Yuichi Watanabe, J. Ko, Kin Kiong Lee, Isamu Nashiyama

615

Distribution of Paramagnetic Defects in 3C-SiC Epitaxial Films Grown by LPCVD Method with Alternate Gas Supply

Authors: Tomio Izumi, K. Kobayashi, E. Hirosawa, Takamitsu Kawahara, Hiroyuki Nagasawa

619

Experimental and Theoretical Analysis of the High Temperature Thermal Conductivity of Monocrystalline SiC

Authors: Stephan G. Müller, Robert Eckstein, J. Fricke, Dieter Hofmann, R. Hofmann, R. Horn, H. Mehling, O. Nilsson

623