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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

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Table of Contents

Paper Title Page

6H-SiC Schottky Diode Edge Terminated Using Amorphous SiC by Sputtering Method

Authors: K. Matsumoto, Y. Chen, J. Kuzmik, Shigehiro Nishino

925

Effect of Surface Preparation and Thermal Anneal on Electrical Characteristics of 4H-SiC Schottky Barrier Diodes

Authors: Dev Alok, Richard Egloff, Emil Arnold

929

High Voltage Schottky Barrier Diodes on P-Type 4H and 6H-SiC

Authors: R. Raghunathan, B.J. Baliga

933

High Voltage 4H SiC Rectifiers Using Pt and Ni Metallization

Authors: V. Saxena, A.J. Steckl

937

Medici Simulation of 6H-SiC Oxide Ramp Profile Schottky Structure

Authors: Gheorghe Brezeanu, J. Fernandez, José Millan, M. Badila, G. Dilimot

941

A Dual-Metal-Trench Schottky Pinch-Rectifier in 4H SiC

Authors: K.J. Schoen, Jason Henning, J.M. Woodall, James A. Cooper, M.R. Melloch

945

Characterization of Power MESFETs on 4h-SiC Conductive and Semi-Insulating Wafers

Authors: Olivier Noblanc, C. Arnodof, E. Chartier, Christian Brylinski

949

Silicon Carbide MESFET's for High-Power S-Band Applications

Authors: S.T. Allen, R.A. Sadler, T.S. Alcorn, Joseph J. Sumakeris, R.C. Glass, Calvin H. Carter Jr., John W. Palmour

953

Temperature Dependent Small- and Large-Signal Performance of 4H-SiC MESFET's

Authors: K. Moore, M. Bhatnagar, C. Weitzel, L. Pond, T. Gehoski, T. Chatham

957

Voltage Handling Capability and Microwave Performance of a 4H-SiC MESFET - A Simulation Study

Authors: V. Khemka, T. Paul Chow, Ronald J. Gutmann

961